F1S45N06 데이터 시트보기 (PDF) - Fairchild Semiconductor
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F1S45N06 Datasheet PDF : 8 Pages
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RFG45N06, RFP45N06, RF1S45N06SM
Data Sheet
January 2002
45A, 60V, 0.028 Ohm, N-Channel Power
MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
Formerly developmental type TA49028.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFG45N06
TO-247
RFG45N06
RFP45N06
TO-220AB
RFP45N06
RF1S45N06SM
TO-263AB
F1S45N06
NOTE: When ordering, use the entire part number. Add the suffix, 9A,
to obtain the TO-263AB variant in tape and reel, i.e. RF1S45N06SM9A.
Packaging
DRAIN
(BOTTOM
SIDE METAL)
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
Features
• 45A, 60V
• rDS(ON) = 0.028Ω
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
DRAIN
GATE
SOURCE
DRAIN
(FLANGE)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
©2002 Fairchild Semiconductor Corporation
RFG45N06, RFP45N06, RF1S45N06SM Rev. B
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