2N3906 데이터 시트보기 (PDF) - Philips Electronics

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2N3906

PNP switching transistor 2N3906

Philips Electronics 

Philips Semiconductors

PNP switching transistor

Product specification

2N3906

handboo1k,6f0ull pagewidth

hFE

120

80

40

−010−2

VCE = 1 V.

MGD835

−10−1

−1

−10

Fig.2 DC current gain; typical values.

−102

IC (mA)

−103

ndbook, full pagewidth

VBB

VCC

(probe)

oscilloscope

450 Ω

Vi

RB

R2

R1

RC

Vo

(probe)

oscilloscope

450 Ω

DUT

MGD624

Vi = −5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns.

R1 = 56 Ω; R2 = 2.5 kΩ; RB = 3.9 kΩ; RC = 270 Ω.

VBB = 1.9 V; VCC = −3 V.

Oscilloscope input impedance Zi = 50 Ω.

Fig.3 Test circuit for switching times.

1999 Apr 23

4

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