2N3906 데이터 시트보기 (PDF) - Philips Electronics
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2N3906 Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP switching transistor
Product specification
2N3906
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
250
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
IEBO
hFE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
VCEsat
VBEsat
Cc
Ce
fT
F
collector-emitter saturation
voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
CONDITIONS
IE = 0; VCB = −30 V
IC = 0; VEB = −6 V
VCE = −1 V; note 1; see Fig.2
IC = −0.1 mA
IC = −1 mA
IC = −10 mA
IC = −50 mA
IC = −100 mA
IC = −10 mA; IB = −1 mA; note 1
IC = −50 mA; IB = −5 mA; note 1
IC = −10 mA; IB = −1 mA; note 1
IC = −50 mA; IB = −5 mA; note 1
IE = ie = 0; VCB = −5 V; f = 1 MHz
IC = ic = 0; VEB = −500 mV; f = 1 MHz
IC = −10 mA; VCE = −20 V; f = 100 MHz
IC = −100 µA; VCE = −5 V; RS = 1 kΩ;
f = 10 Hz to 15.7 kHz
MIN.
−
−
60
80
100
60
30
−
−
−
−
−
−
250
−
MAX.
−50
−50
UNIT
nA
nA
−
−
300
−
−
−200
−200
−850
−950
4.5
10
−
4
mV
mV
mV
mV
pF
pF
MHz
dB
Switching times (between 10% and 90% levels); see Fig.3
ton
turn-on time
td
delay time
tr
rise time
toff
turn-off time
ts
storage time
tf
fall time
ICon = −10 mA; IBon = −1 mA; IBoff = 1 mA −
−
−
−
−
−
65
ns
35
ns
35
ns
300 ns
225 ns
75
ns
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
1999 Apr 23
3
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