IRFD220 데이터 시트보기 (PDF) - Fairchild Semiconductor
부품명
상세내역
일치하는 목록
IRFD220 Datasheet PDF : 7 Pages
| |||
IRFD220
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
SYMBOL
TEST CONDITIONS
I SD
ISDM
Modified MOSFET
Symbol Showing the
Integral Reverse P-N
D
Junction Diode
G
MIN
TYP
MAX UNITS
-
-
0.8
A
-
-
6.4
A
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
V SD
TJ = 25oC, ISD = 0.8A, VGS = 0V (Figure 12)
-
trr
TJ = 150oC, ISD = 0.8A, dISD/dt = 100A/µs
-
Q RR
TJ = 150oC, ISD = 0.8A, dISD/dt = 100A/µs
-
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by Max junction temperature.
4. VDD = 25V, starting TJ = 25oC, L = 12.62mH, RG = 50Ω, peak IAS = 3.5A.
-
2.0
V
150
-
ns
0.6
-
µC
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT
TEMPERATURE
1.0
0.8
0.6
0.4
0.2
0
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
AMBIENT TEMPERATURE
10
1
10µs
100µs
1ms
10ms
0.1
0.01
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
100ms
1s
TC = 25oC
TJ = MAX RATED
0.001
1
10
DC
102
103
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
10
VGS = 10V
VGS = 7V
8
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VGS = 6V
6
4
VGS = 5V
2
VGS = 4V
0
0
20
40
60
80
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. OUTPUT CHARACTERISTICS
©2002 Fairchild Semiconductor Corporation
IRFD220 Rev. B
Share Link: 