IRFD220 데이터 시트보기 (PDF) - Fairchild Semiconductor

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IRFD220

0.8A, 200V, 0.800 Ohm, N-Channel Power MOSFET

Fairchild Semiconductor 

Data Sheet

January 2002

IRFD220

0.8A, 200V, 0.800 Ohm, N-Channel

Power MOSFET

This N-Channel enhancement mode silicon gate power field

effect transistor is an advanced power MOSFET designed,

tested, and guaranteed to withstand a specified level of

energy in the breakdown avalanche mode of operation. All of

these power MOSFETs are designed for applications such

as switching regulators, switching convertors, motor drivers,

relay drivers, and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

These types can be operated directly from integrated

circuits.

Formerly developmental type TA09600.

Ordering Information

PART NUMBER

PACKAGE

BRAND

IRFD220

HEXDIP

IRFD220

NOTE: When ordering, use the entire part number.

Features

• 0.8A, 200V

• rDS(ON) = 0.800Ω

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

D

G

S

Packaging

HEXDIP

GATE

DRAIN

SOURCE

©2002 Fairchild Semiconductor Corporation

IRFD220 Rev. B

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