050N03L(2008) 데이터 시트보기 (PDF) - Infineon Technologies
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050N03L Datasheet PDF : 12 Pages
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13 Avalanche characteristics
I AS=f(t AV); R GS=25 Ω
parameter: T j(start)
100
150 °C
25 °C
100 °C
10
IPD050N03L G
IPS050N03L G
14 Typ. gate charge
V GS=f(Q gate); I D=30 A pulsed
parameter: V DD
12
10
IPF050N03L G
IPU050N03L G
15 V
6V
24 V
8
6
4
2
1
10-1
100
101
102
t AV [µs]
15 Drain-source breakdown voltage
V BR(DSS)=f(T j); I D=1 mA
0
103
0 5 10 15 20 25 30 35 40
Q gate [nC]
16 Gate charge waveforms
34
V GS
32
30
28
26
V g s(th)
24
22
Q g(th)
20
-60
-20
20
60 100 140 180
T j [°C]
Q gs
Rev. 1.02
page 7
Qg
Q sw
Q gd
Q gate
2008-04-15
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