050N03L(2008) 데이터 시트보기 (PDF) - Infineon Technologies
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050N03L Datasheet PDF : 12 Pages
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9 Drain-source on-state resistance
R DS(on)=f(T j); I D=30 A; V GS=10 V
10
IPD050N03L G IPF050N03L G
IPS050N03L G IPU050N03L G
10 Typ. gate threshold voltage
V GS(th)=f(T j); V GS=V DS; I D=250 µA
2.5
8
2
6
1.5
98 %
typ
4
1
2
0.5
0
-60
-20
20
60 100 140 180
T j [°C]
0
-60 -20
20
60 100 140 180
T j [°C]
11 Typ. capacitances
C =f(V DS); V GS=0 V; f =1 MHz
104
12 Forward characteristics of reverse diode
I F=f(V SD)
parameter: T j
103
Ciss
103
Coss
102
Crss
25 °C, 98%
102
25 °C
175 °C
175 °C, 98%
z
101
101
0
Rev. 1.02
10
20
V DS [V]
100
30
0
page 6
0.5
1
1.5
V SD [V]
2
2008-04-15
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