GN4014ZB4LD 데이터 시트보기 (PDF) - Renesas Electronics
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GN4014ZB4LD Datasheet PDF : 8 Pages
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GN4014ZB4LD, GN4014ZB4LS, GN4014ZB4LM
Main Characteristics
Power vs. Temperature Derating
80
60
40
20
0
0
50
100
150
200
Case Temperature Tc (°C)
Collector to Emitter Breakdown Voltage
vs. Case Temperature
500
450
400
350
300 IC = 2 mA
-50
0
50
100
150
Case Temperature Tc (°C)
Typical Transfer Characteristics
20
VCE = 10 V
Pulse Test
16
12
8
Tc = 125°C
4
25°C
-40°C
0
0
1
2
3
4
5
Gate to Emitter Voltage VGE (V)
REJ03G1249-0300 Rev.3.00 Jun 01, 2009
Page 3 of 7
Maximum Safe Operation Area
100
10 µs
10
1
DC
PW
Operati=on10(Tmc s=(215s1h°Comt))s
100
µs
0.1
Ta = 25°C
0.01
1 3 10 30 100 300 1000
Collector to Emitter Voltage VCE (V)
Typical Output Characteristics
10 10 V
15 V
8
6V
4V
Pulse Test
6
4
2
VGE = 2 V
0
0
2
4
6
8
10
Collector to Emitter Voltage VCE (V)
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage
5
Pulse Test
4
3
2
IC = 10 A
1
8A
6A
0
0
4
8
12 16 20
Gate to Emitter Voltage VGE (V)
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