GN4014ZB4LD 데이터 시트보기 (PDF) - Renesas Electronics

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GN4014ZB4LD

Silicon IGBT Ignition Coil Driver

Renesas Electronics 

GN4014ZB4LD, GN4014ZB4LS, GN4014ZB4LM

Electrical Characteristics

Item

Symbol Min

Collector to Emitter breakdown

voltage

V(BR)CES

370

Gate to Emitter breakdown voltage V(BR)GES ±20

Collector cutoff current

ICES

—

Gate cutoff current

IGES

—

Collector to emitter saturation voltage VCE(sat)1

—

Collector to emitter saturation voltage VCE(sat)2

—

Gate to emitter cutoff voltage

VGE(off)

1.3

Turn-on delay time

td(on)

—

Rise time

tr

—

Turn-off delay time

td (off)

—

Fall time

tf

—

Input capacitance

Ciss

—

Output capacitance

Coss

—

Reveres transfer capacitance

Cres

—

Secondary breakdown energy

Es/b

230

Typ Max

400

430

—

—

—

1.4

1.6

—

0.2

0.4

1.0

5

1110

75

18

—

—

100

±100

1.7

2.2

2.2

—

—

—

—

—

—

—

—

(Ta = 25°C)

Unit

Test Conditions

V Ic = 2 mA, VGE = 0 V

V IG = ±100 µA, VCE = 0 V

µA VCE = 300 V, VGE = 0 V

µA VGE = ±20 V, VCE = 0 V

V IC = 8 A, VGE = 10 V

V IC = 8 A, VGE = 4 V

V IC = 1 mA, VCE = 10 V

µs VCE = 300 V, RL = 50 Ω,

µs VGE = 5 V, RG = 200 Ω

µs

µs

pF VCE = 10 V, VGE = 0,

pF f = 1 MHz

pF

mJ L = 5 mH

REJ03G1249-0300 Rev.3.00 Jun 01, 2009

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