CY62146EV30 데이터 시트보기 (PDF) - Cypress Semiconductor

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CY62146EV30

4-Mbit (256 K × 16) Static RAM

Cypress Semiconductor 

CY62146EV30 MoBL®

Capacitance

Parameter [9]

Description

CIN

COUT

Input capacitance

Output capacitance

Thermal Resistance

Parameter [9]

Description

JA

Thermal resistance

(junction to ambient)

JC

Thermal resistance

(junction to case)

Test Conditions

TA = 25 C, f = 1 MHz, VCC = VCC(typ)

Max

Unit

10

pF

10

pF

Test Conditions

Still air, soldered on a 3 × 4.5 inch,

two-layer printed circuit board

VFBGA

75

10

TSOP II

77

13

Unit

C/W

C/W

AC Test Loads and Waveforms

Figure 3. AC Test Loads and Waveforms

R1

VCC

Output

30 pF

R2

VCC

10%

GND

Rise Time = 1 V/ns

All Input Pulses

90%

Including

JIG and

Scope

Equivalent to: Thevenin Equivalent

Output

RTH

V

90%

10%

Fall Time = 1 V/ns

Parameters

R1

R2

RTH

VTH

2.50 V

16667

15385

8000

1.20

3.0 V

Unit

1103



1554



645



1.75

V

Note

9. Tested initially and after any design or process changes that may affect these parameters.

Document Number: 38-05567 Rev. *H

Page 5 of 18

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