BUK101-50GS 데이터 시트보기 (PDF) - NXP Semiconductors.
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BUK101-50GS Datasheet PDF : 11 Pages
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Philips Semiconductors
PowerMOS transistor
TOPFET
Product specification
BUK101-50GS
VDD
RL
D
TOPFET
I
P
D.U.T.
RI
VIS
S
ID measure
0V
0R1
Fig.20. Test circuit for resistive load switching times.
VDD = VCL
LD
t p : adjust for correct ID
D
TOPFET
I
P
D.U.T.
RI
VIS
S
ID measure
0V
0R1
Fig.23. Test circuit for inductive load switching times.
RESISTIVE TURN-ON
VDS / V
10
td on
tr
5
BUK101-50GS
VIS / V
ID / A
90%
10%
10%
0
0
10
20
time / us
Fig.21. Typical switching waveforms, resistive load.
VDD = 13 V; RL = 2.1 Ω; RI = 50 Ω, Tj = 25 ˚C.
RESISTIVE TURN-OFF
td off
10
90%
ID / A
5
90%
VIS / V
BUK101-50GS
VDS / V
tf
10%
0
0
10
20
30
40
50
time / us
Fig.22. Typical switching waveforms, resistive load.
VDD = 13 V; RL = 2.1 Ω; RI = 50 Ω, Tj = 25 ˚C.
INDUCTIVE TURN-ON
10
VIS / V
BUK101-50GS
5
10%
0
td on
ID / A
90%
tr
VDS / V
10%
0
10
20
time / us
Fig.24. Typical switching waveforms, inductive load.
VDD = 10 V; ID = 6 A; RI = 50 Ω, Tj = 25 ˚C.
INDUCTIVE TURN-OFF
10
td off
90%
ID / A
5
BUK101-50GS
VDS / V
tf
90%
VIS / V
10%
0
0
10
20
30
40
50
time / us
Fig.25. Typical switching waveforms, inductive load.
VDD = 10 V; ID = 6 A; RI = 50 Ω, Tj = 25 ˚C.
January 1993
8
Rev 1.200
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