BUK101-50GS 데이터 시트보기 (PDF) - NXP Semiconductors.
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BUK101-50GS Datasheet PDF : 11 Pages
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Philips Semiconductors
PowerMOS transistor
TOPFET
Product specification
BUK101-50GS
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
VDSS
Continuous off-state drain source
VIS = 0 V
-
voltage1
VIS
Continuous input voltage
-
0
ID
Continuous drain current
Tmb ≤ 25 ˚C; VIS = 10 V
-
ID
Continuous drain current
Tmb ≤ 100 ˚C; VIS = 10 V
-
IDRM
Repetitive peak on-state drain current Tmb ≤ 25 ˚C; VIS = 10 V
-
PD
Total power dissipation
Tmb ≤ 25 ˚C
-
Tstg
Storage temperature
-
-55
Tj
Continuous junction temperature2
normal operation
-
Tsold
Lead temperature
during soldering
-
MAX.
50
11
29
18
120
75
150
150
250
UNIT
V
V
A
A
A
W
˚C
˚C
˚C
OVERLOAD PROTECTION LIMITING VALUES
With the protection supply provided via the input pin, TOPFET can protect itself from two types of overload.
SYMBOL PARAMETER
CONDITIONS
MIN. MAX. UNIT
VISP
Protection supply voltage3
Over temperature protection
for valid protection
5
-
V
VDDP(T)
VDDP(P)
PDSM
Protected drain source supply voltage VIS = 10 V
Short circuit load protection
Protected drain source supply voltage4 VIS = 10 V
VIS = 5 V
Instantaneous overload dissipation Tmb = 25 ˚C
-
50
V
-
20
V
-
35
V
-
1.3
kW
OVERVOLTAGE CLAMPING LIMITING VALUES
At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.
SYMBOL PARAMETER
CONDITIONS
MIN. MAX. UNIT
IDROM
EDSM
EDRM
Repetitive peak clamping current
Non-repetitive clamping energy
Repetitive clamping energy
VIS = 0 V
Tmb ≤ 25 ˚C; IDM = 27 A;
VDD ≤ 20 V; inductive load
Tmb ≤ 95 ˚C; IDM = 8 A;
VDD ≤ 20 V; f = 250 Hz
-
29
A
-
625
mJ
-
40
mJ
ESD LIMITING VALUE
SYMBOL PARAMETER
VC
Electrostatic discharge capacitor
voltage
CONDITIONS
Human body model;
C = 250 pF; R = 1.5 kΩ
MIN.
-
MAX.
2
UNIT
kV
1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.
2 A higher Tj is allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates to protect the switch.
3 The input voltage for which the overload protection circuits are functional.
4 The device is able to self-protect against a short circuit load providing the drain-source supply voltage does not exceed VDDP(P) maximum.
For further information, refer to OVERLOAD PROTECTION CHARACTERISTICS.
January 1993
2
Rev 1.200
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