4MBI400VG-060R-50 데이터 시트보기 (PDF) - Fuji Electric
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4MBI400VG-060R-50 Datasheet PDF : 10 Pages
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4MBI400VG-060R-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
[ SW mode B ]
Switching time vs. Collector current (typ.)
VCC=200V, VGE=±15V, RG=+2.2/-39Ω, Tj=125°C (T3, T4)
10000
toff
1000
ton
tr
tf
100
[ SW mode B ]
Switching time vs. Collector current (typ.)
VCC=200V, IC=400A, VGE=±15V, Tj=125°C
10000
toff
1000
ton
tr
tf
100
10
0
100 200 300 400 500 600 700
Collector current: IC [A]
[ SW mode B ]
Switching loss vs. gate resistance (typ.)
VCC=200V, IC=400A, VGE=±15V
100
50
Eoff(125°C)
Eoff(25°C)
Eon(125°C)
Err(125°C)
Eon(25°C)
0
Err(25°C)
1
10
100
1000
Gate resistance : RG [Ω] (T3, T4)
Transient Thermal Resistance (max.)
1
FWD
IGBT
0.1
RB-IGBT
0.01
0.001
τ
Rth
[ °C/W ]
[sec]
IGBT
FWD
RB-IGBT
0.0023
0.01180
0.02360
0.00858
0.001
0.01
0.0301
0.02991
0.05983
0.02176
0.0598
0.04226
0.08452
0.03073
0.1
Pulse Width : PW [sec]
0.0708
0.02603
0.05206
0.01893
1
10
1
10
100
Gate resistance : RG [Ω] (T3, T4)
[ SW mode B ]
Switching loss vs. Collector current (typ.)
VCC=200V, VGE=±15V, RG=+2.2/-39Ω (T3, T4)
60
50
Eoff(125°C)
40
Eoff(25°C)
30
20
10
0
0
Err(125°C)
Eon(125°C)
Eon(25°C)
Err(25°C)
100 200 300 400 500 600 700
Collector current: IC [A]
Reverse bias safe operating area (max.)
VGE=15V,-VGE ≦ 15V, RG ≧ +2.2 / -39Ω, Tj ≦ 125°C (T3, T4)
T3, T4 (Terminal)
1000
800
600
400
RBSOA
(Repetitive pulse)
200
0
0
200
400
600
800
Collector-Emitter voltage : VCE [V]
8
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