4MBI400VG-060R-50 데이터 시트보기 (PDF) - Fuji Electric
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4MBI400VG-060R-50 Datasheet PDF : 10 Pages
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4MBI400VG-060R-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Symbols Conditions
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
ICES
VGE = 0V, VCE = 600V
IGES
VCE = 0V, VGE = ±20V
VGE (th)
VCE = 20V, IC = 400mA
VCE (sat)
(chip)
VGE = 15V
IC = 400A
Tj= 25°C
Tj=125°C
VCE (sat)
(terminal)
VGE = 15V
IC = 400A
Tj= 25°C
Tj=125°C
Cies
VCE = 10V, VGE =0V, f = 1MHz
ton
tr
SW mode : A
VCC = 400V
tr (i)
IC = 400A
toff
VGE = ±15V
RG = +10/-39Ω LS = 80nH
tf
VF (chip) IF = 400A
Tj= 25°C
Tj=125°C
VF (terminal) IF = 400A
Tj= 25°C
Tj=125°C
Characteristics
min. typ. max.
-
-
2.0
-
-
400
6.2
6.7
7.2
-
1.60 1.85
-
1.90
-
-
1.79 2.10
-
2.09
-
-
27
-
0.95 1.90
-
0.65 1.30
-
0.30
-
-
3.20 6.40
-
0.20 0.50
-
1.60 1.85
-
1.50
-
-
1.72 2.05
-
1.62
-
Reverse recovery time
SW mode : A
trr
VCC = 400V
IF = 400A
VGE = ±15V
RG = +10/-39Ω
-
-
0.35
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
ICES
IGES
VGE (th)
VCE (sat)
(chip)
VCE (sat)
(terminal)
Cies
ton
tr
tr (i)
toff
tf
VGE = 0V, VCE = 600V
VCE = 0V, VGE = ±20V
VCE = 20V, IC = 400mA
VGE = 15V
IC = 400A
Tj= 25°C
Tj=125°C
VGE = 15V
IC = 400A
Tj= 25°C
Tj=125°C
VCE = 10V, VGE = 0V, f = 1MHz
SW mode : B
VCC = 200V
IC = 400A
VGE = ±15V
RG = +2.2/-39Ω
LS = 54nH
-
-
4.0
-
-
800
5.5
6.5
7.5
-
2.45 2.80
-
2.60
-
-
2.67 3.10
-
2.82
-
-
26
-
-
0.35 0.70
-
0.25 0.50
-
0.15
-
-
1.75 3.50
-
0.15 0.35
Reverse recovery time
SW mode : C
trr
VCC = 200V
IC = 400A
VGE = ±15V
RG = +10/-39Ω
-
-
0.35
Internal inductance
P-N
L
P-M
M-N
-
40
-
-
33
-
-
33
-
Thermal resistance characteristics
Items
Symbols Conditions
T1, T2 IGBT
Characteristics
min. typ. max.
-
-
0.11
Thermal resistance (1device)
Rth(j-c)
T1, T2 FWD
T3, T4 RB-IGBT
-
-
0.22
-
-
0.08
Contact thermal resistance (1device) (*4)
Rth(c-f)
T1, T2
T3, T4
with Thermal Compound
-
0.025
-
-
0.013
-
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound (thermal conductivity = 1W/m ·k).
Units
mA
nA
V
V
nF
µs
V
µs
mA
nA
V
V
nF
µs
µs
nH
Units
°C/W
2
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