2SD2098 데이터 시트보기 (PDF) - Weitron Technology

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2SD2098

NPN Plastic-Encapsulate Transistor

Weitron Technology 

2SD2098

10

5

2

1

0.5

0.2

0.1

0.05

0.02

0.01

5m

2m

1m

0

Ta =100 C

25 C

-25 C

VCE =2V

0.2 0.4 0.6 0.8 1.0 1.2 1.4

VBE ,BASE TO EMITTER VOLTAGE (V)

FIG.1 Grounded Emitter Propagation

Characteristics

5000

2000

1000

500

Ta =25 C

VCE =5V

200

2V

100

1V

50

20

10

5

1m 2m 5m 0.010.020.050.1 0.2 0.5 1 2 5 10

IC ,COLLECTOR CURRENT(A)

FIG.3 DC Current Gain vs.

Collector Current

1000

500

Ta =25 C

VCE =6V

200

100

50

20

10

5

2

1

1m 2m 5m 10m 20m 50m 0.1 0.2 0.5 1

IE,EMITTER CURRENT(A)

FIG.5 Gain Bandwidth Product vs.

Emitter Current

WEITRON

http://www.weitron.com.tw

5 50mA

45mA

4

3

2

35mA

30mA

Ta =25 C

25mA

20mA

15mA

40mA

10mA

5mA

1

0

I B=0mA

0

0.4 0.8 1.2 1.6 2.0

VCE,COLLECTOR TO EMITTER VOLTAGE(V)

FIG.2 Grounded Emitter Output

Characteristics

2

Ta =25 C

1

0.5

0.2

0.1

0.05

IC/IB=50

40

0.02

30

10

0.01

2m 5m0.01 0.02 0.05 0.1 0.2 0.5 1 2

5 10

IC ,COLLECTOR CURRENT(A)

FIG.4 Collector-Emitter

Saturation Voltage vs.

Collector Current

1000

500

Ta =25 C

f=1MHz

IC =0A

IE =0A

200

Cib

100

50

Cob

20

10

0.1 0.2 0.5 1 2 5 10 20 50

VCB ,COLLECTOR TO BASE VOLTAGE(V)

VEB ,EMITTER TO BASE VOLTAGE(V)

FIG.6 Collector Output Capacitance vs.

Collector-Base Voltage

Emitter Input Capacitance vs.

Emitter-Base Voltage

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