2SD2098 데이터 시트보기 (PDF) - Weitron Technology

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2SD2098

NPN Plastic-Encapsulate Transistor

Weitron Technology 

NPN Plastic-Encapsulate Transistor

ABSOLUTE MAXIMUM RATINGS(Ta=25%C)

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Junction Temperature, Storage Temperature

Symbol

VCEO

VCBO

VEBO

IC

I CP

PC

Tj , Tstg

Device Marking

2SD2098Q=AHQ, 2SD2098R=AHR

ELECTRICAL CHARACTERISTICS

Characteristics

Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB=0)

Collector-Base Breakdown Voltage (IC= 50 µAdc, IE=0)

Emitter-Base Breakdown Voltage (IE= 50 µAdc, IC=0)

Collector Cutoff Current (VCB= 40 Vdc, IE=0)

Emitter Cutoff Current (VEB=5.0 Vdc, IC=0)

Note:

1. Single pulse pw=10ms

2SD2098

SOT-89

1

1. BASE

2

3

2. COLLECTOR

3. EMITTER

Value

20

50

6.0

5.0

10

0.5

150, -55 to +150

Unit

Vdc

Vdc

Vdc

Adc(DC)

Adc (Pulse)(1)

W

%C

Symbol

Min

Max

Unit

V(BR)CEO

20

-

Vdc

V(BR)CBO

50

-

Vdc

V(BR)EBO

6.0

-

Vdc

ICBO

-

0.5

uAdc

IEBO

-

0.5

uAdc

WEITRON

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