2N5429 데이터 시트보기 (PDF) - SavantIC Semiconductor
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2N5429 Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2N5427 2N5429
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
2N5427
2N5429
IC=50mA ;IB=0
VCEsat-1 Collector-emitter saturation voltage IC=2A; IB=0.2A
VCEsat-2 Collector-emitter saturation voltage IC=7A ;IB=0.7A
VBE sat-1 Base-emitter saturation voltage
IC=2A; IB=0.2A
VBE sat-2 Base-emitter saturation voltage
IC=7A ;IB=0.7A
ICBO
Collector cut-off current
VCB=Rated VCBO; IE=0
ICEX
Collector
cut-off current
2N5427
2N5429
VCE= 75V; VBE(off)=-1.5V
TC=150
VCE= 90V; VBE(off)=-1.5V
TC=150
IEBO
Emitter cut-off current
VEB=6V; IC=0
hFE-1
DC current gain
IC=0.5A ; VCE=2V
hFE-2
DC current gain
IC=2A ; VCE=2V
hFE-3
DC current gain
IC=5A ; VCE=2V
fT
Transition frequency
IC=0.5A ; VCE=10V;f=10MHz
MIN TYP. MAX UNIT
80
V
100
0.7
V
1.2
V
1.2
V
2.0
V
0.1
mA
0.1
1.0
mA
0.1
1.0
0.1
mA
30
30
120
20
20
MHz
2
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