SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2N5427 2N5429
DESCRIPTION
·With TO-66 package
·Excellent safe operating area
·Low collector saturation voltage
APPLICATIONS
·For switching and wide-band
amplifier applications.
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
2N5427
2N5429
Open emitter
VCEO
Collector-emitter voltage
2N5427
2N5429
Open base
VEBO
Emitter-base voltage
Open collector
IC
Collector current
IB
Base current
PD
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
80
100
80
100
6
7
1
40
200
-65~200
UNIT
V
V
V
A
A
W
VALUE
4.37
UNIT
/W