2N1613 데이터 시트보기 (PDF) - Philips Electronics
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2N1613 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN medium power transistor
Product specification
2N1613
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
ICBO
IEBO
hFE
VCEsat
VBEsat
Cc
Ce
fT
collector cut-off current
IE = 0; VCB = 60 V
−
IE = 0; VCB = 60 V; Tamb = 150 °C
−
emitter cut-off current
IC = 0; VEB = 5 V
−
DC current gain
IC = 0.1 mA; VCE = 10 V
20
IC = 10 mA; VCE = 10 V; note 1
35
IC = 10 mA; VCE = 10 V; Tamb = −55 °C 20
IC = 150 mA; VCE = 10 V; note 1
40
IC = 500 mA; VCE = 10 V; note 1
20
collector-emitter saturation voltage IC = 150 mA; IB = 15 mA
−
base-emitter saturation voltage IC = 150 mA; IB = 15 mA
−
collector capacitance
IE = ie = 0; VCB = 10 V
−
emitter capacitance
IC = ic = 0; VEB = 0.5 V
−
transition frequency
IC = 50 mA; VCE = 10 V; f = 100 MHz 60
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
MAX.
10
10
10
−
−
−
120
−
1.5
1.3
25
80
−
UNIT
nA
µA
nA
V
V
pF
pF
MHz
1997 Apr 11
4
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