2N1613 데이터 시트보기 (PDF) - Philips Electronics
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2N1613 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN medium power transistor
Product specification
2N1613
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
Tstg
Tj
Tamb
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb ≤ 25 °C
Tcase = 100 °C
Tcase ≤ 25 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
Rth j-c
thermal resistance from junction to ambient
thermal resistance from junction to case
Note
1. Refer to TO-39 standard mounting conditions.
CONDITIONS
note 1
MIN.
−
−
−
−
−
−
−
−
−
−65
−
−65
MAX.
75
50
7
500
1
200
0.8
1.7
3
+150
200
+150
UNIT
V
V
V
mA
A
mA
W
W
W
°C
°C
°C
VALUE
218
58.3
UNIT
K/W
K/W
1997 Apr 11
3
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