BAS28-235 데이터 시트보기 (PDF) - NXP Semiconductors.
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BAS28-235 Datasheet PDF : 12 Pages
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NXP Semiconductors
BAS28
High-speed double diode
7. Characteristics
Table 7. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
VF
forward voltage
IF = 1 mA
IF = 10 mA
IF = 50 mA
IF = 150 mA
IR
reverse current
VR = 25 V
VR = 75 V
VR = 25 V; Tj = 150 °C
VR = 75 V; Tj = 150 °C
Cd
diode capacitance
f = 1 MHz; VR = 0 V
trr
reverse recovery time
VFR
forward recovery voltage
Min Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
[1] -
-
[2] -
-
[1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.
[2] When switched from IF = 10 mA; tr = 20 ns.
Max Unit
715 mV
855 mV
1
V
1.25 V
30 nA
1
μA
30 μA
50 μA
1.5 pF
4
ns
1.75 V
300
IF
(mA)
200
mbg382
(1)
(2) (3)
102
IFSM
(A)
10
mbg704
100
1
0
0
1
VF (V)
2
(1) Tj = 150 °C; typical values
(2) Tj = 25 °C; typical values
(3) Tj = 25 °C; maximum values
Fig 1. Forward current as a function of forward
voltage
10−1
1
10
102
103
104
tp (μs)
Based on square wave currents.
Tj = 25 °C; prior to surge
Fig 2. Non-repetitive peak forward current as a
function of pulse duration; maximum values
BAS28
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 22 July 2010
© NXP B.V. 2010. All rights reserved.
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