BAS28-235 데이터 시트보기 (PDF) - NXP Semiconductors.

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BAS28-235

High-speed double diode

NXP Semiconductors. 

BAS28

High-speed double diode

Rev. 3 — 22 July 2010

Product data sheet

1. Product profile

1.1 General description

Two high-speed switching diodes fabricated in planar technology, and encapsulated in a

small SOT143B Surface-Mounted Device (SMD) plastic package. The diodes are not

connected.

1.2 Features and benefits

„ High switching speed: trr ≤ 4 ns

„ Reverse voltage: VR ≤ 75 V

„ Repetitive peak reverse voltage: VRRM ≤ 85 V

„ Repetitive peak forward current: IFRM ≤ 500 mA

„ AEC-Q101 qualified

„ Small SMD package

1.3 Applications

„ High-speed switching in e.g. surface-mounted circuits

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter

Per diode

IF

forward current

IR

reverse current

VR

reverse voltage

trr

reverse recovery time

Conditions

VR = 75 V

Min Typ

[1] -

-

-

-

-

-

[2] -

-

[1] Device mounted on an FR4 Printed-Circuit Board (PCB).

[2] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.

Max

215

1

75

4

Unit

mA

μA

V

ns

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