VND670SP13TR 데이터 시트보기 (PDF) - STMicroelectronics

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VND670SP13TR

Dual high-side switch with dual Power MOSFET gate driver (bridge configuration)

STMicroelectronics 

VND670SP

Electrical specifications

Table 10. Enable

Symbol

Parameter

VENL

Enable low level voltage

IENL

Enable pin current

VENH Enable high level voltage

IENH

Enable pin current

VEHYST Enable hysteresis voltage

VENCL Enable clamp voltage

VDIAG

Enable output low level

voltage

Test conditions

Normal operation

(DIAGX/ENX pin acts

as an input pin)

VEN = 1.5 V

Normal operation

(DIAGX/ENX pin acts

as an input pin)

VEN = 3.25 V

Normal operation

(DIAGX/ENX pin acts

as an input pin)

IEN = 1mA

IEN = -1mA

Fault operation

(DIAGX/ENX pin acts

as an input pin)

IEN = 1.6 mA

Min.

1

3.25

0.5

6.0

-1.0

Typ. Max. Unit

1.5 V

µA

V

10 µA

V

6.8 8.0 V

-0.7 -0.3 V

0.4 V

Figure 4. Test conditions for high-side switching times measurement

VOUTA, B

80%

(dVOUT/dt)on

10%

90%

(dVOUT/dt)off

t

VINA, B

td(on) tr

td(off) tf

t

9/20

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