VND670SP13TR 데이터 시트보기 (PDF) - STMicroelectronics

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VND670SP13TR

Dual high-side switch with dual Power MOSFET gate driver (bridge configuration)

STMicroelectronics 

VND670SP

3

Application information

Application information

Figure 7. Typical application circuit for DC to 10 KHz PWM operation

+5V

R1

Rprot

1K

DIAGA/ENA

Rprot

1K

PWM

Rprot

1K

INA

GATEA

VCC

VND670SP

OUTA

GND

Rgnd(*)

OUTB

UP

M

+5V

R1

Rprot

1K

DIAGB/ENB

GATEB

INB

Rprot

1K

DOWN

External Power Mos A

External Power Mos B

Note: 1 Reverse battery protection: series relay in VCC line: Rgnd=0 Ohms; series fuse in VCC line

with antiparallel diode between ground and VCC: Rgnd=10 Ohms.

2 Layout hints: the connection between GND pin of the VN670SP and the Power MOSFET

SOURCE connections should be kept short enough to ensure that the dynamic difference

between these two points never exceed 1V for the bridge to operate properly.

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