U630H16P 데이터 시트보기 (PDF) - Simtek Corporation
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U630H16P Datasheet PDF : 17 Pages
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U630H16P
DC Characteristics
Output High Voltage
Output Low Voltage
Output High Current
Output Low Current
Input Leakage Current
Output Leakage Current
High
Low
High at Three-State- Output
Low at Three-State- Output
Symbol
Conditions
VOH
VOL
IOH
IOL
IIH
IIL
IOHZ
IOLZ
VCC
IOH
IOL
VCC
VOH
VOL
VCC
VIH
VIL
VCC
VOH
VOL
= 4.5 V
=-4 mA
= 8 mA
= 4.5 V
= 2.4 V
= 0.4 V
= 5.5 V
= 5.5 V
= 0V
= 5.5 V
= 5.5 V
= 0V
Min.
2.4
8
-1
-1
Max.
Unit
V
0.4
V
-4
mA
mA
1
μA
μA
1
μA
μA
SRAM Memory Operations
No.
Switching Characteristics
Read Cycle
Symbol
Alt.
IEC
1 Read Cycle Timef
2 Address Access Time to Data Validg
3 Chip Enable Access Time to Data Valid
4 Output Enable Access Time to Data Valid
5 E HIGH to Output in High-Zh
6 G HIGH to Output in High-Zh
7 E LOW to Output in Low-Z
8 G LOW to Output in Low-Z
9 Output Hold Time after Addr. Changeg
10 Chip Enable to Power Activee
11 Chip Disable to Power Standbyd, e
tAVAV
tAVQV
tELQV
tGLQV
tEHQZ
tGHQZ
tELQX
tGLQX
tAXQX
tELICCH
tEHICCL
tcR
ta(A)
ta(E)
ta(G)
tdis(E)
tdis(G)
ten(E)
ten(G)
tv(A)
tPU
tPD
e: Parameter guaranteed but not tested.
f: Device is continuously selected with E and G both LOW.
g: Address valid prior to or coincident with E transition LOW.
h: Measured ± 200 mV from steady state output voltage.
STK Control #ML0037
4
35
Unit
Min.
Max.
35
ns
35
ns
35
ns
20
ns
17
ns
17
ns
5
ns
0
ns
3
ns
0
ns
35
ns
Rev 1.0
March 31, 2006
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