TGA4505 데이터 시트보기 (PDF) - TriQuint Semiconductor

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TGA4505

4 Watt Ka Band HPA

TriQuint Semiconductor 

TGA4505

TABLE I

MAXIMUM RATINGS

Symbol

V+

V-

I+

| IG |

PIN

PD

TCH

TSTG

Parameter 1/

Positive Supply Voltage

Negative Supply Voltage Range

Positive Supply Current:

Gate Supply Current

Input Continuous Wave Power

Power Dissipation

Operating Channel Temperature

Mounting Temperature

(30 Seconds)

Storage Temperature

Value

8V

-5V TO 0V

4A

62 mA

24 dBm

27.7 W

200 °C

320 °C

-65 to 150 °C

Notes

2/

2/

2/

2/, 3/

4/, 5/

1/ These ratings represent the maximum operable values for this device.

2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD.

3/ When operated at this bias condition with a base plate temperature of 70 °C, the

median life is 2.3E4 hours.

4/ Junction operating temperature will directly affect the device median time to failure (Tm). For

maximum life, it is recommended that junction temperatures be maintained at the lowest possible

levels.

5/ These ratings apply to each individual FET.

TABLE II

DC PROBE TEST

(TA = 25 °C, nominal)

NOTES

SYMBOL

1/

1/

1/, 2/

1/, 2/

1/, 2/

IDSS(Q35)

GM (Q35)

|VP(Q1, Q9, Q35)|

|VBVGS(Q35)|

|VBVGD(Q35)|

LIMITS

MIN

15

33

0.5

11

11

MAX

70.5

79.5

1.5

30

30

1/ Q35 is a 150 um Test FET

2/ VP, VBVGD, and VBVGS are negative.

UNITS

mA

mS

V

V

V

2

TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com

May 2009 © Rev -

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