TGA4505(2005) 데이터 시트보기 (PDF) - TriQuint Semiconductor

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TGA4505
(Rev.:2005)

4 Watt Ka Band HPA

TriQuint Semiconductor 

Advance Product Information

July 22, 2005

TABLE III

RF CHARACTERIZATION TABLE

(TA = 25qC, Nominal)

(Vd = 6V, Id = 2.1A)

TGA4505-EPU

SYMBOL

Gain

PARAMETER

Small Signal Gain

TEST

CONDITION

F = 24-31 GHz

TYPICAL

23

UNITS

dB

IRL

Input Return Loss F = 24-31 GHz

6

dB

ORL

Output Return Loss F = 24-31 GHz

12

dB

PWR Output Power @ P1dB F = 24-31 GHz

35

dBm

Note: Table III Lists the RF Characteristics of typical devices as determined by

fixtured measurements.

TABLE IV

THERMAL INFORMATION

Parameter

RθJC Thermal

Resistance

(channel to backside of

carrier)

Test Conditions

Vd = 6V

ID = 2.05 A

Pdiss = 12.3 W

TCH

(oC)

128

RTJC

(qC/W)

TM

(HRS)

4.7 7.4E+6

Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil

CuMo Carrier at 70°C baseplate temperature. Worst case is at saturated output

power when DC power consumption rises to 23 W with 4 W RF power

delivered to load. Power dissipated is 19 W and the temperature rise in the

channel is 88 °C. Baseplate temperature must be reduced to 62 °C to

remain below the 150 °C maximum channel temperature.

3

TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com

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