TGA4505(2005) 데이터 시트보기 (PDF) - TriQuint Semiconductor
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TGA4505 Datasheet PDF : 9 Pages
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Advance Product Information
July 22, 2005
TABLE I
MAXIMUM RATINGS
TGA4505
Symbol
V+
V-
I+
| IG |
PIN
PD
TCH
TM
TSTG
Parameter 1/
Positive Supply Voltage
Negative Supply Voltage Range
Positive Supply Current:
Gate Supply Current
Input Continuous Wave Power
Power Dissipation
Operating Channel Temperature
Mounting Temperature
(30 Seconds)
Storage Temperature
Value
8V
-5V TO 0V
4A
62 mA
24 dBm
17.2 W
150 0C
320 0C
-65 to 150 0C
Notes
2/
2/
2/
2/, 3/
4/, 5/
1/ These ratings represent the maximum operable values for this device.
2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD.
3/ When operated at this bias condition with a base plate temperature of 70 0C, the
median life is 1E+6 hours.
4/ Junction operating temperature will directly affect the device median time to failure (TM). For
maximum life, it is recommended that junction temperatures be maintained at the lowest possible
levels.
5/ These ratings apply to each individual FET.
TABLE II
DC PROBE TEST
(TA = 25 qC, nominal)
NOTES
SYMBOL
1/
1/
1/, 2/
1/, 2/
1/, 2/
IDSS(Q35)
GM (Q35)
|VP(Q1, Q9, Q35)|
|VBVGS(Q35)|
|VBVGD(Q35)|
LIMITS
MIN
15
33
0.5
11
11
MAX
70.5
79.5
1.5
30
30
1/ Q35 is a 150 um Test FET
2/ VP, VBVGD, and VBVGS are negative.
UNITS
mA
mS
V
V
V
2
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
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