TCET1110 데이터 시트보기 (PDF) - Vishay Semiconductors
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TCET1110 Datasheet PDF : 9 Pages
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TCET111.(G)
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
VISHAY
300
Coupled Device
250
200
Phototransistor
150
IR–Diode
100
50
0
0
16736
20 40 60 80 100 120
Tamb – Ambient Temperature ( °C )
Figure 6. Total Power Dissipation vs. Ambient Temperature
10010000.0000
100100.0000
1001.0000
VCE = 30 V
10 V
10.1000
1.010
16738
0 20 40 60 80 100 120
Tamb – Ambient Temperature ( °C )
Figure 9. Collector Dark Current vs. Ambient Temperature
1000.0
100.0
10.0
1.0
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
96 11862
VF – Forward Voltage ( V )
Figure 7. Forward Current vs. Forward Voltage
100
VCE=5V
10
1
0.1
0.01
0.1
95 11027
1
10
100
IF – Forward Current ( mA )
Figure 10. Collector Current vs. Forward Current
1.20
1.00
0.80 VCE = 5 V
IF = 5 mA
0.60
0.40
0.20
0.00
–40 –20 0 20 40 60 80 100 120
16737
Tamb – Ambient Temperature ( °C )
Figure 8. Relative Current Transfer Ratio vs. Ambient
Temperature
100
20mA
IF=50mA
10
10mA
5mA
1
2mA
1mA
0.1
0.1
95 10985
1
10
100
VCE – Collector Emitter Voltage ( V )
Figure 11. Collector Current vs. Collector Emitter Voltage
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6
Document Number 83546
Rev. A3, 18-Mar-03
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