TCET1110 데이터 시트보기 (PDF) - Vishay Semiconductors
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TCET1110 Datasheet PDF : 9 Pages
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TCET111.(G)
Vishay Semiconductors
Order Information
Part
TCET1110 (G)
Remarks
50 to 600 %
TCET1111 (G)
TCET1112 (G)
TCET1113 (G)
40 to 80 %
63 to 125 %
100 to 200 %
TCET1114 (G)
TCET1115 (G)
160 to 320 %
50 to 150 %
TCET1116 (G)
TCET1117 (G)
TCET1118 (G)
100 to 300 %
80 to 160 %
130 to 260 %
TCET1119 (G)
200 to 400 %
G = Lead form 10.16 mm; G is not marked on the body,
4 Pin = Single Channel
VISHAY
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the devise. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Emitter
Parameter
Reverse voltage
Forward current
Forward surge current
Power dissipation
Junction temperature
Test condition
tp ≤ 10 µs
Symbol
VR
IF
IFSM
PDiss
Tj
Value
Unit
6
V
60
mA
1.5
A
100
mW
125
°C
Detector
Parameter
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
Power dissipation
Junction temperature
Test condition
tp/T = 0.5, tp ≤ 10 ms
Symbol
Value
Unit
VCEO
70
V
VECO
7
V
IC
50
mA
ICM
100
mA
PDiss
150
mW
Tj
125
°C
Coupler
Parameter
Isolation test voltage (RMS)
Test condition
t = 1 min
Total power dissipation
Operating ambient temperature
range
Storage temperature range
Soldering temperature
2 mm from case t ≤ 10 s
Symbol
Value
Unit
VIO
5
kV
Ptot
250
mW
Tamb
- 40 to + 110
°C
Tstg
- 55 to + 125
°C
Tsd
260
°C
www.vishay.com
2
Document Number 83546
Rev. A3, 18-Mar-03
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