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TC7660

CHARGE PUMP DC-TO-DC CONVERTER

TelCom Semiconductor Inc => Microchip 

CHARGE PUMP DC-TO-DC

VOLTAGE CONVERTER

TC7660

ABSOLUTE MAXIMUM RATINGS*

Supply Voltage ...................................................... +10.5V

LV and OSC Inputs

Voltage (Note 1) ........................ – 0.3V to (V+ + 0.3V)

for V+ < 5.5V

(V+ – 5.5V) to (V+ + 0.3V)

for V+ > 5.5V

Current Into LV (Note 1) ..................... 20 µA for V+ > 3.5V

Output Short Duration (VSUPPLY ≤ 5.5V) ......... Continuous

Power Dissipation (TA ≤ 70°C) (Note 2)

CerDIP ............................................................800mW

Plastic DIP ......................................................730mW

SOIC ...............................................................470mW

Operating Temperature Range

C Suffix .................................................. 0°C to +70°C

I Suffix ............................................... – 25°C to +85°C

E Suffix ............................................. – 40°C to +85°C

M Suffix ........................................... – 55°C to +125°C

Storage Temperature Range ................ – 65°C to +150°C

Lead Temperature (Soldering, 10 sec) ................. +300°C

*Static-sensitive device. Unused devices must be stored in conductive

material. Protect devices from static discharge and static fields. Stresses

above those listed under "Absolute Maximum Ratings" may cause perma-

nent damage to the device. These are stress ratings only and functional

operation of the device at these or any other conditions above those

indicated in the operation sections of the specifications is not implied.

Exposure to absolute maximum rating conditions for extended periods

may affect device reliability.

ELECTRICAL CHARACTERISTICS: Specifications Measured Over Operating Temperature Range With,

V+ = 5V, COSC = 0, Test Circuit (Figure 1), unless otherwise indicated.

Symbol Parameter

Test Conditions

Min Typ Max Unit

I+

V+H

V+L

ROUT

Supply Current

Supply Voltage Range, High

Supply Voltage Range, Low

Output Source Resistance

FOSC

PEFF

VOUT EFF

ZOSC

Oscillator Frequency

Power Efficiency

Voltage Conversion Efficiency

Oscillator Impedance

RL = ∞

Min ≤ TA ≤ Max,

RL = 10 kΩ, LV Open

Min ≤ TA ≤ Max,

RL = 10 kΩ, LV to GND

IOUT = 20mA, TA = 25°C

IOUT = 20mA, 0°C ≤ TA ≤ +70°C

(C Device)

IOUT = 20mA, – 40°C ≤ TA ≤ +85°C

(I Device)

IOUT = 20mA, – 55°C ≤ TA ≤ +125°C

(M Device)

V+ = 2V, IOUT = 3 mA, LV to GND

0°C ≤ TA ≤ +70°C

V+ = 2V, IOUT = 3 mA, LV to GND

– 55°C ≤ TA ≤ +125°C (Note 3)

Pin 7 open

RL = 5 kΩ

RL = ∞

V+ = 2V

V+ = 5V

—

80

180 µA

3

—

10 V

1.5

—

3.5 V

—

70

100 Ω

—

—

120 Ω

—

—

130 Ω

—

104 150 Ω

—

150 300 Ω

—

160 600 Ω

—

10

— kHz

95

98

—%

97 99.9 — %

—

1

— MΩ

—

100

— kΩ

NOTES: 1. Connecting any input terminal to voltages greater than V+ or less than GND may cause destructive latch-up. It is recommended that no

inputs from sources operating from external supplies be applied prior to "power up" of the TC7660.

2. Derate linearly above 50°C by 5.5 mW/°C.

3. TC7660M only.

4. The TC7660 can be operated without the Dx diode over full temperature and voltage range.

4-52

TELCOM SEMICONDUCTOR, INC.

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