2N3860 데이터 시트보기 (PDF) - Semicoa Semiconductor
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2N3860 Datasheet PDF : 2 Pages
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Data Sheet No. 2N3960
Electrical Characteristics
OFF Characteristics
TC = 25oC unless otherwise specified
Symbol Min
Collector-Base Breakdown Voltage
IC = 10 µA
V(BR)CBO
20
Collector-Emitter Breakdown Voltage
IC = 10 mA
V(BR)CEO
12
Emitter-Base Breakdown Voltage
IC = 10 µA
V(BR)EBO
4.5
Collector-Emitter Cutoff Current
VCE = 10 V, VBE = 0.4 V
ICEX1
---
VCE = 10 V, VEB = 2.0 V
ICEX2
---
VCE = 10 V, VEB = 2.0 V, TA = 150oC
ICEX3
---
Max
---
---
---
1.0
5.0
5.0
Unit
V
V
V
µA
nA
µA
ON Characteristics
Forward Current Transfer Ratio
IC = 1.0 mA, VCE = 1 V
IC = 10 mA, VCE = 1 V, pulsed
IC = 30 mA, VCE = 1 V, pulsed
IC = 10 mA, VCE = 1.0 V, TC = -55oC
Base-Emitter Saturation Voltage
VCE 1.0 V, IC = 1.0 mA
VCE 1.0 V, IC = 30 mA
Collector-Emitter Saturation Voltage
IC = 1.0 mA, IB = 0.1 mA
IC = 30 mA, IB = 3.0 mA
Symbol
hFE1
hFE2
hFE3
hFE4
VBE1
VBE2
VCE(sat)1
VCE(sat)2
Min
40
60
30
30
---
---
---
---
Max
---
300
---
---
0.8
1.0
0.2
0.3
Unit
---
---
---
V dc
V dc
V dc
V dc
Small Signal Characteristics
Magnitude of Common Emitter, Small Signal, Short Circuit
Forward Current Transfer Ratio
VCE = 4 V, IC = 5.0 mA, f = 100 MHz
VCE = 4 V, IC = 10 mA, f = 100 MHz
VCE = 4 V, IC = 30 mA, f = 100 MHz
Open Circuit Output Capacitance
VCB = 4 V, IE = 0, 100 kHz < f < 1 MHz
Input Capacitance, Output Open Circuited
VEB = 0.5 V, IC = 0, 100 kHz < f < 1 MHz
Symbol
|hFE1|
|hFE2|
|hFE3|
COBO
CIBO
Min
13
14
12
---
---
Max
---
---
---
2.5
2.5
Unit
---
---
---
pF
pF
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