2N3860 데이터 시트보기 (PDF) - Semicoa Semiconductor
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2N3860 Datasheet PDF : 2 Pages
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Type 2N3960
Geometry 0003
Polarity NPN
Qual Level: JAN - JANTXV
Features:
• General-purpose low-power NPN
silicon transistor.
• Housed in TO-18 case.
• Also available in chip form using
the 0003 chip geometry.
• The Min and Max limits shown are
per MIL-PRF-19500/399 which
Semicoa meets in all cases.
Data Sheet No. 2N3960
Generic Part Number:
2N3960
REF: MIL-PRF-19500/399
TO-18
Rating
Maximum Ratings
TC = 25oC unless otherwise specified
Symbol
Rating
Collector-Emitter Voltage
VCEO
12
Collector-Base Voltage
VCBO
20
Emitter-Base Voltage
Power Dissipation, TA = 25oC
Derate above 25oC
VEBO
4.5
PT
400
2.3
Operating Junction Temperature
TJ
-65 to +200
Storage Temperature
TSTG
-65 to +200
Unit
V
V
V
mW
mW/oC
oC
oC
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