STW11NK100Z 데이터 시트보기 (PDF) - STMicroelectronics

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STW11NK100Z

N-channel 1000V - 1.1Ω - 8.3A - TO-247 Zener - Protected SuperMESH™ PowerMOSFET

STMicroelectronics 

Electrical characteristics

STW11NK100Z

Table 7. Source drain diode

Symbol

Parameter

Test conditions

ISD

ISDM(1)

VSD(2)

Source-drain current

Source-drain current (pulsed)

Forward on voltage

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD=8.3A, VGS=0

ISD=8.3,

di/dt = 100A/µs,

VDD=80V, Tj=25°C

(see Figure 18)

ISD=8A,

di/dt = 100A/µs,

VDD=80V, Tj=150°C

(see Figure 18)

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration=300µs, duty cycle 1.5%

Min Typ. Max Unit

8.3 A

33.2 A

1.6 V

560

ns

4.48

µC

16

A

620

ns

4.57

µC

16

A

6/14

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