STW11NK100Z 데이터 시트보기 (PDF) - STMicroelectronics

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STW11NK100Z

N-channel 1000V - 1.1Ω - 8.3A - TO-247 Zener - Protected SuperMESH™ PowerMOSFET

STMicroelectronics 

STW11NK100Z

1

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

VDS

VDGR

VGS

ID

ID

IDM(1)

PTOT

Drain-source voltage (VGS = 0)

Drain-gate voltage (RGS = 20KΩ)

Gate-source voltage

Drain current (continuous) at TC = 25°C

Drain current (continuous) at TC=100°C

Drain current (pulsed)

Total dissipation at TC = 25°C

Derating Factor

VESD (G-S) Gate source ESD(HBM-C=100pF, R=1,5KΩ)

dv/dt(2) Peak diode recovery voltage slope

TJ

Operating junction temperature

Tstg

Storage temperature

1. Pulse width limited by safe operating area

2. ISD ≤8.3 A, di/dt ≤200A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX

Table 2. Thermal data

Symbol

Parameter

Rthj-case

Rthj-a

Tl

Thermal resistance junction-case Max

Thermal resistance junction-ambient Max

Maximum lead temperature for soldering

purpose

Table 3. Avalanche characteristics

Symbol

Parameter

Avalanche current, repetitive or not-repetitive

IAR

(pulse width limited by Tj Max)

Single pulse avalanche energy

EAS (starting Tj=25°C, Id=Iar, Vdd=50V)

Electrical ratings

Value

1000

1000

± 30

8.3

5.2

33.2

230

1.85

6000

4.5

-55 to 150

Unit

V

V

V

A

A

A

W

W/°C

V

V/ns

°C

Value

0.54

50

300

Unit

°C/W

°C/W

°C

Value

Unit

8.3

A

550

mJ

3/14

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