STTH802D 데이터 시트보기 (PDF) - STMicroelectronics
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STTH802D Datasheet PDF : 11 Pages
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STTH802
Characteristics
Table 4.
Symbol
Dynamic characteristics
Parameter
trr Reverse recovery time
IRM Reverse recovery current
tfr Forward recovery time
VFP Forward recovery voltage
Test conditions
IF = 1 A, dIF/dt = -50 A/µs,
VR = 30 V, Tj = 25 °C
IF = 1 A, dIF/dt = -100 A/µs,
VR = 30 V, Tj = 25 °C
IF = 8 A, dIF/dt = -200 A/µs,
VR = 160 V, Tj = 125 °C
IF = 8 A, dIF/dt = 50 A/µs
VFR = 1.1 x VFmax, Tj = 25 °C
IF = 8 A, dIF/dt = 50 A/µs,
Tj = 25 °C
Min. Typ Max. Unit
25 30 ns
17 22
5.5 7
A
150
ns
1.5
V
Figure 1. Peak current versus duty cycle
IM(A)
100
80
T
IM
dδ=tp/T
tp
60
P = 5W
40
P = 2W
P = 1W
20
δ
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Figure 2. Forward voltage drop versus
forward current (typical values)
IFM(A)
200
180
160
140
120
100
80
60
40
20
0
0.0
0.5
Tj=150°C
Tj=25°C
1.0
1.5
2.0
VFM(V)
2.5
3.0
Figure 3.
Forward voltage drop versus
Figure 4.
forward current (maximum values)
Relative variation of thermal
impedance, junction to case,
versus pulse duration (TO-220AC,
DPAK, D2PAK)
IFM(A)
200
180
160
140
120
100
80
60
40
20
0
0.0
0.5
Tj=150°C
Tj=25°C
1.0
1.5
2.0
VFM(V)
2.5
3.0
Zth(j-c)/Rth(j-c)
1.0
Single pulse
TO-220AC
DPAK
D2PAK
0.1
1.E-03
1.E-02
1.E-01
tp(s)
1.E+00
3/11
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