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전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크

STTH802D 데이터 시트보기 (PDF) - STMicroelectronics

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STTH802D
ST-Microelectronics
STMicroelectronics ST-Microelectronics
STTH802D Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
Characteristics
1
Characteristics
STTH802
Table 1. Absolute ratings (limiting values at Tj = 25° C, unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
200
V
IF(RMS)
RMS forward current
16
A
Average
TO-220A, DPAK, D2PAK
Tc = 145° C
IF(AV)
forward
current, δ = 0.5 TO-220FPAC
8
A
Tc = 125° C
IFSM
Surge non
repetitive
tp = 10 ms Sinusoidal
forward current
100
A
Tstg
Storage temperature range
Tj
Maximum operating junction temperature
-65 to + 175
°C
175
°C
Table 2. Thermal parameters
Symbol
Rth(j-c)
Junction to case
Parameter
TO-220AC, DPAK, D2PAK
TO-220FPAC
Value
3.2
5.5
Unit
° C/W
Table 3. Static electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ Max. Unit
IR(1) Reverse leakage current
VF(2) Forward voltage drop
Tj = 25° C
Tj = 125° C
Tj = 25° C
Tj = 150° C
VR = VRRM
IF = 8 A
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: tp = 380 µs, δ < 2 %
To evaluate the conduction losses use the following equation:
P = 0.73 x IF(AV) + 0.021 IF2(RMS)
6
µA
6
60
0.95 1.05
V
0.8 0.90
2/11

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