STTH12R06 데이터 시트보기 (PDF) - STMicroelectronics
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STTH12R06 Datasheet PDF : 11 Pages
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Charactersitics
STTH12R06
Figure 7. Reverse recovery charges
versus dIF/dt (typical values)
Figure 8. Softness factor versus
dIF/dt (typical values)
Qrr(nC)
500
450
VR=400V
Tj=125°C
400
350
300
250
IF=2 x IF(AV)
IF=IF(AV)
0.50
0.45
S factor
IF≤2 x IF(AV)
VR=400V
Tj=125°C
0.40
0.35
0.30
200
150
100
50
0
0
IF=0.5 x IF(AV)
0.25
0.20
0.15
dIF/dt(A/µs)
0.10
200
400
600
800
1000
0
dIF/dt(A/µs)
200
400
600
800
1000
Figure 9.
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
25
Relative variations of dynamic
parameters versus junction
temperature
S factor
IRM
QRR
50
Tj(°C)
75
IF=IF(AV)
VR=400V
Reference: Tj=125°C
100
125
Figure 10. Transient peak forward voltage
versus dIF/dt (typical values)
VFP(V)
12
11
IF=IF(AV)
Tj=125°C
10
9
8
7
6
5
4
3
2
1
dIF/dt(A/µs)
0
0
100
200
300
400
500
Figure 11. Forward recovery time versus
dIF/dt (typical values)
tfr(ns)
180
160
140
120
100
80
60
40
20
0
0
100
dIF/dt(A/µs)
200
300
IF=IF(AV)
VFR=1.1 x VF max.
Tj=125°C
400
500
Figure 12. Junction capacitance versus
reverse voltage applied (typical
values)
C(pF)
100
F=1MHz
VOSC=30mVRMS
Tj=25°C
10
1
VR(V)
10
100
1000
4/11
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