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전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크

STTH12R06 데이터 시트보기 (PDF) - STMicroelectronics

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STTH12R06
ST-Microelectronics
STMicroelectronics ST-Microelectronics
STTH12R06 Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
Charactersitics
1
Charactersitics
STTH12R06
Table 1. Absolute Ratings (limiting values)
Symbol
Parameter
Value
Unit
VRRM
IF(RMS)
IF(AV)
Repetitive peak reverse voltage
RMS forward voltage
TO-220AC / TO-220FPAC / D2PAK
TO-220AC Ins.
Average forward current δ =
0.5
TO-220AC / D2PAK
TO-220FPAC
TO-220AC Ins.
Tc = T125° C
Tc = 50° C
Tc = 80° C
600
V
30
A
24
12
A
IFSM
Tstg
Tj
Surge non repetitive forward current
Storage temperature range
Maximum operating junction temperature
tp = 10 ms sinusoidal
100
A
-65 to + 175 °C
175
°C
Table 2.
Symbol
Thermal Resistance
Rth(j-c) Junction to case
Parameter
TO-220AC / D2PAK
TO-220FPAC
TO-220AC Ins.
Value (max).
1.7
4.4
3.3
Unit
°C/W
Table 3. Static Electrical Characteristics
Symbol
Parameter
Test conditions
Min. Typ Max.
Unit
Tj = 25° C
IR
Reverse leakage current
VR = VRRM
Tj = 125° C
VF Forward voltage drop
Tj = 25° C
Tj = 125° C
IF = 12 A
45
µA
50 600
2.9
V
1.4 1.8
Table 4.
Symbol
To evaluate the conduction losses use the following equation:
P = 1.16 x IF(AV) + 0.053 IF2(RMS)
Dynamic Characteristics
Parameter
Test conditions
Min Typ Max Unit
trr Reverse recovery time
IRM Reverse recovery current
S factor Softness factor
Qrr Reverse recovery charges
tfr Forward recovery time
VFP Forward recovery voltage
Tj = 25° C IF = 0.5 A Irr = 0.25 A IR = 1 A
IF = 1 A dIF/dt = -50 A/µs VR = 30 V
Tj = 125° C
IF = 12 A VR = 400 V
dIF/dt = -200 A/µs
Tj = 25° C
IF = 12 A dIF/dt = 96 A/µs
VFR = 1.1 x VFmax
25
ns
45
7.0 8.4 A
0.2
180
nC
200 ns
5.5 V
2/11

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