STTH5L06
Characteristics
Figure 11. Transient peak forward voltage
versus dIF/dt (90% confidence)
Figure 12. Forward recovery time versus dIF/dt
(90% confidence)
VFP(V)
10
9
IF=IF(AV)
Tj=125°C
8
tfr(ns)
200
180
160
IF=IF(AV)
VFR=1.1 x VF max.
Tj=125°C
7
140
6
120
5
100
4
80
3
60
2
40
1
dIF/dt(A/µs)
20
dIF/dt(A/µs)
0
0
0
20
40
60
80 100 120 140 160 180 200
0
20
40
60
80 100 120 140 160 180 200
Figure 13. Junction capacitance versus
reverse voltage applied (typical
values)
Figure 14. Thermal resistance junction to
ambient versus copper surface
under tab (epoxy FR4, eCU = 35 µm)
(DPAK)
C(pF)
100
10
1
1
VR(V)
10
100
F=1MHz
VOSC=30mV
Tj=25°C
Rth(j-a)(°C/W)
80
70
60
50
40
30
20
10
0
0
2
4
6
1000
SCU(cm²)
8
10
12
14
16
18
20
Figure 15.
Thermal resistance junction to
ambient versus copper surface
under each lead (epoxy printed
circuit board FR4, copper
thickness: 35µm) (DO-201AD)
Rth(j-a)(°C/W)
80
70
60
DO-201AD
50
40
30
20
10
SCU(cm²)
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
5/10