STTH1602C 데이터 시트보기 (PDF) - STMicroelectronics
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STTH1602C Datasheet PDF : 7 Pages
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STTH1602C
Fig. 5: Reverse recovery charges versus dIF/dt
(typical values, per diode).
Qrr(nC)
280
260
IF=8A
240
VR=160V
220
200
180
160
140
120
100
80
60
40
20
0
10
Tj=125°C
dIF/dt(A/µs)
100
Tj=25°C
1000
Fig. 6: Reverse recovery time versus dIF/dt
(typical values, per diode).
trr(ns)
80
IF=8A
70
VR=160V
60
50
40
30
20
10
0
10
Tj=125°C
dIF/dt(A/µs)
100
Tj=25°C
1000
Fig. 7: Peak reverse recovery current versus dIF/dt
(typical values, per diode).
IRM(A)
16
IF=8A
14
VR=160V
12
10
8
6
4
2
0
10
Tj=125°C
dIF/dt(A/µs)
100
Tj=25°C
1000
Fig. 8: Dynamic parameters versus junction
temperature.
Qrr;IRM[Tj]/Qrr;IRM[Tj=125°C]
1.4
IF=8A
1.2
VR=160V
1.0
0.8
IRM
Qrr
0.6
0.4
0.2
Tj(°C)
0.0
25
50
75
100
125
150
Fig. 9: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, eCU: 35µm) for D2PAK.
Rth(j-a)(°C/W)
80
70
60
50
40
30
20
10
S(Cu)(cm²)
0
0
2
4
6
8
10
12
14
16
18
20
4/7
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