STTH1602C 데이터 시트보기 (PDF) - STMicroelectronics
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STTH1602C Datasheet PDF : 7 Pages
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STTH1602C
Fig. 1: Peak current versus duty cycle (per diode).
IM(A)
80
70
IM
T
60
50
δ=tp/T
tp
40
P = 15W
30
20
P = 8W
10
P = 3W
δ
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Fig. 2-1: Forward voltage drop versus forward
current (typical values, per diode).
IFM(A)
100
90
80
70
Tj=150°C
60
50
40
Tj=25°C
30
20
10
VFM(V)
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
Fig. 2-2: Forward voltage drop versus forward
current (maximum values, per diode).
IFM(A)
100
90
80
70
60
Tj=150°C
50
40
30
Tj=25°C
20
10
VFM(V)
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
Fig. 3-1: Relative variation of thermal impedance
junction to case versus pulse duration (TO-220AB,
D2PAK, I2PAK).
Zth(j-c)/Rth(j-c)
1.0
Single pulse
0.1
1.E-03
1.E-02
tp(s)
1.E-01
1.E+00
Fig. 3-2: Relative variation of thermal impedance
junction to case versus pulse duration
(TO-220FPAB).
Zth(j-c)/Rth(j-c)
1.0
Fig. 4: Junction capacitance versus reverse
voltage applied (typical values, per diode).
C(pF)
100
F=1MHz
VOSC=30mVRMS
Tj=25°C
Single pulse
0.1
0.0
1.E-03
1.E-02
tp(s)
1.E-01
1.E+00
1.E+01
10
0
VR(V)
50
100
150
200
3/7
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