STTH102-Y 데이터 시트보기 (PDF) - STMicroelectronics
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STTH102-Y Datasheet PDF : 7 Pages
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Characteristics
STTH102-Y
Figure 7. Peak recovery current versus dIF/dt Figure 8. Reverse recovery charges versus
(90% confidence)
dIF/dt (90% confidence)
IRM(A)
3.5
IF=1A
VR=100V
3.0
Tj=125°C
2.5
2.0
1.5
1.0
0.5
0.0
1
Tj=125°C
Tj=25°C
dIF/dt(A/µs)
10
100
1000
Qrr(nC)
35.0
32.5
30.0
IF=1A
VR=100V
27.5
25.0
22.5
20.0
17.5
15.0
12.5
10.0
7.5
5.0
2.5
0.0
1
Tj=125°C
Tj=25°C
dIF/dt(A/µs)
10
100
1000
Figure 9.
Relative variations of dynamic
parameters versus junction
temperature
IRM; trr; Qrr [Tj] / IRM; trr; Qrr [Tj =25°C]
3.5
IF=IF(AV)
dIF/dt=200A/µs
VR=100V
3.0
QRR
2.5
2.0
trr
1.5
IRM
Tj(°C)
1.0
25
50
75
100
125
150
175
Figure 10. Thermal resistance junction to
ambient versus copper surface
under each lead
120 Rth(j-a)(°C/W)
110
Epoxy printed circuit board FR4, copper thickness: 35 µm
100
90
80
70
60
50
40
30
20
10
S(cm²)
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
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Doc ID 17982 Rev 1
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