STTH102-Y 데이터 시트보기 (PDF) - STMicroelectronics
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STTH102-Y Datasheet PDF : 7 Pages
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STTH102-Y
Characteristics
Figure 1. Average forward power dissipation Figure 2. Average forward current versus
versus average forward current
ambient temperature (δ = 0.5)
PF(AV)(W)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.0
0.2
δ = 0.05 δ = 0.1 δ = 0.2
δ = 0.5
δ=1
IF(AV)(A)
0.4
0.6
0.8
T
δ=tp/T
1.0
tp
1.2
IF(AV)(A)
1.2
1.0
0.8
0.6
0.4
T
0.2
0.0
0
δ=tp/T
25
tp
50
Rth(j-a)=Rth(j-I)
Rth(j-a)=120°C/W
Tamb(°C)
75
100
125
150
175
Figure 3.
Relative variation of thermal
impedance junction to ambient
versus pulse duration
1.0 Zth(j-a)/Rth(j-a)
0.9
0.8
0.7
0.6 δ = 0.5
T
0.5
0.4
0.3 δ = 0.2
δ=tp/T
0.2 δ = 0.1
0.1
Single pulse
0.0
epoxy printed circuit board,
e(Cu) = 35 µm, recommended pad layout
1.E-01
1.E+00
1.E+01
1.E+02
tp
tp(s)
1.E+03
Figure 4. Forward voltage drop versus
forward current
IFM(A)
100.0
10.0
1.0
Tj=125°C
(maximum values)
Tj=125°C
(typical values)
Tj=25°C
(maximum values)
VFM(V)
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
Figure 5.
C(pF)
100
10
1
1
Junction capacitance versus
reverse voltage applied
(typical values)
F=1MHz
VOSC=30mVRMS
Tj=25°C
VR(V)
10
100
1000
Figure 6.
trr(ns)
70
60
50
40
30
20
10
0
1
Reverse recovery time versus dIF/dt
(90% confidence)
Tj=125°C
Tj=25°C
dIF/dt(A/µs)
10
100
IF=1A
VR=100V
Tj=125°C
1000
Doc ID 17982 Rev 1
3/7
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