STB150NF04 데이터 시트보기 (PDF) - STMicroelectronics

부품명

상세내역

일치하는 목록

STB150NF04

N-channel 40 V - 0.005 Ω - 80 A - D2PAK STripFET™II Power MOSFET

STMicroelectronics 

Electrical characteristics

STB150NF04

Table 6. Switching times

Symbol

Parameter

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Test conditions Min. Typ. Max. Unit

15

ns

VDD = 25 V, ID = 40 A

150

ns

RG = 4.7 Ω, VGS = 10 V

70

ns

(see Figure 13)

45

ns

Table 7.

Symbol

Source drain diode

Parameter

Test conditions

Min Typ. Max Unit

ISD

ISDM(1)

Source-drain current

Source-drain current (pulsed)

ISD = 80 A, VGS = 0

VSD(2) Forward on voltage

ISD = 80 A, VGS = 0

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD= 80 A,

di/dt=100 A/µs

VDD = 25 V, Tj = 150 °C

(see Figure 15)

80 A

320 A

ns

1.3 nC

A

73

A

170

A

4.6

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration=300µs, duty cycle 1.5%

4/11

Share Link: