STB150NF04 데이터 시트보기 (PDF) - STMicroelectronics
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STB150NF04 Datasheet PDF : 11 Pages
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Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VDS
Drain-source voltage (VGS = 0)
VGS
ID(1)
ID (1)
IDM(2)
Gate- source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Ptot
Total dissipation at TC = 25 °C
Derating factor
dv/dt (3) Peak diode recovery voltage slope
EAS (4) Single pulse avalanche energy
Tstg
Storage temperature
Tj
Max. operating junction temperature
1. Current limited by package
2. Pulse width limited by safe operating area
3. ISD ≤ 80A, di/dt ≤ 300A/µs, VDD=80%V(BR)DSS
4. Starting Tj = 25 °C, ID=40 A, VDD=30 V
Table 3. Thermal resistance
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-pcb (1) Thermal resistance junction-pcb max
1. When mounted on 1inch² FR-4 board, 2 oz of Cu
STB150NF04
Value
40
± 20
80
80
320
300
2
2
0.6
-55 to 175
Unit
V
V
A
A
A
W
W/°C
V/ns
J
°C
Value
0.5
35
Unit
°C/W
°C/W
2/11
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