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SST34HF1681

16 Mbit Concurrent SuperFlash + 8 Mbit SRAM ComboMemory

Silicon Storage Technology 

16 Mbit Concurrent SuperFlash + 8 Mbit SRAM ComboMemory

SST34HF1681

Advance Specifications

Product Identification Mode Exit/

CFI Mode Exit

In order to return to the standard Read mode, the Software

Product Identification mode must be exited. Exit is accom-

plished by issuing the Software ID Exit command

sequence, which returns the device to the Read mode.

This command may also be used to reset the device to the

Read mode after any inadvertent transient condition that

apparently causes the device to behave abnormally, e.g.,

not read correctly. Please note that the Software ID Exit/

CFI Exit command is ignored during an internal Program or

Erase operation. See Table 4 for software command

codes, Figure 16 for timing waveform and Figure 23 for a

flowchart.

SRAM Operation

With BES1# low, BES2 and BEF# high, the

SST34HF1681 operates as 512K x16 CMOS SRAM,

with fully static operation requiring no external clocks or

timing strobes. The SST34HF1681 SRAM is mapped

into the first 512 KWord address space. When BES1#,

BEF# are high and BES2 is low, all memory banks are

deselected and the device enters standby. Read and

Write cycle times are equal. The control signals UBS#

and LBS# provide access to the upper data byte and

lower data byte. See Table 3 for SRAM Read and Write

data byte control modes of operation.

SRAM Read

The SRAM Read operation of the SST34HF1681 is con-

trolled by OE# and BES1#, both have to be low with WE#

and BES2 high for the system to obtain data from the out-

puts. BES1# and BES2 are used for SRAM bank selection.

OE# is the output control and is used to gate data from the

output pins. The data bus is in high impedance state when

OE# is high. Refer to the Read cycle timing diagram, Fig-

ure 3, for further details.

SRAM Write

The SRAM Write operation of the SST34HF1681 is con-

trolled by WE# and BES1#, both have to be low, BES2

have to be high for the system to write to the SRAM. During

the Word-Write operation, the addresses and data are ref-

erenced to the rising edge of either BES1#, WE#, or the

falling edge of BES2 whichever occurs first. The write time

is measured from the last falling edge of BES#1 or WE# or

the rising edge of BES2 to the first rising edge of BES1#, or

WE# or the falling edge of BES2. Refer to the Write cycle

timing diagram, Figures 4 and 5, for further details.

FUNCTIONAL BLOCK DIAGRAM

AMS - A0

Address

Buffers

RST#

BEF#

WP#

LBS#

UBS#

WE#

OE#

BES1#

BES2

RY/BY#

Control

Logic

Address

Buffers

AMS = Most significant address

SuperFlash Memory

(Bank 1)

SuperFlash Memory

(Bank 2)

I/O Buffers

DQ15 - DQ0

8 Mbit

SRAM

561 ILL B1.2

©2001 Silicon Storage Technology, Inc.

5

S71214-00-000 12/01 561

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