16 Mbit Concurrent SuperFlash + 8 Mbit SRAM ComboMemory
SST34HF1681
Advance Specifications
ADDRESS A19-0
BEF#
OE#
WE#
DQ6
TCE
TOEH
TOE
FIGURE 10: FLASH TOGGLE BIT TIMING DIAGRAM
TBR
VALID DATA
TWO READ CYCLES
WITH SAME OUTPUTS
561 ILL F11.2
ADDRESS A19-0
BEF#
OE#
WE#
RY/BY#
DQ15-0
SIX-BYTE CODE FOR CHIP-ERASE
5555 2AAA
5555
5555
2AAA
5555
TSCE
TWP
TBY
XXAA XX55
XX80
XXAA
XX55
XX10
Note: This device also supports BEF# controlled Chip-Erase operation. The WE# and BEF#
signals are interchageable as long as minimum timings are met. (See Table 15)
X can be VIL or VIH, but no other value.
FIGURE 11: FLASH WE# CONTROLLED CHIP-ERASE TIMING DIAGRAM
TBR
VALID
561 ILL F12.2
©2001 Silicon Storage Technology, Inc.
20
S71214-00-000 12/01 561