SST34HF1681 데이터 시트보기 (PDF) - Silicon Storage Technology

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SST34HF1681

16 Mbit Concurrent SuperFlash + 8 Mbit SRAM ComboMemory

Silicon Storage Technology 

16 Mbit Concurrent SuperFlash + 8 Mbit SRAM ComboMemory

SST34HF1681

Advance Specifications

TABLE 9: RECOMMENDED SYSTEM POWER-UP TIMINGS

Symbol

Parameter

Minimum

Units

TPU-READ1

TPU-WRITE1

Power-up to Read Operation

Power-up to Write Operation

100

µs

100

µs

T9.0 561

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

TABLE 10: CAPACITANCE (Ta = 25°C, f=1 Mhz, other pins open)

Parameter

Description

Test Condition

Maximum

CI/O1

I/O Pin Capacitance

VI/O = 0V

20 pF

CIN1

Input Capacitance

VIN = 0V

16 pF

T10.1 561

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

TABLE 11: FLASH RELIABILITY CHARACTERISTICS

Symbol

Parameter

Minimum Specification Units Test Method

NEND1

TDR1

Endurance

Data Retention

10,000

100

Cycles JEDEC Standard A117

Years JEDEC Standard A103

ILTH1

Latch Up

100 + IDD

mA JEDEC Standard 78

T11.0 561

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

©2001 Silicon Storage Technology, Inc.

13

S71214-00-000 12/01 561

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