Figure A. Definition of switching times
SKW30N60
i,v
di /dt
F
I
F
I
rrm
t =t +t
rr S F
Q =Q +Q
rr
S
F
t
rr
t
t
S
F
QQ
S
F
10% I
t
rrm
di /dt V
90% I r r
R
rrm
Figure C. Definition of diodes
switching characteristics
τ1
r1
Tj (t)
p(t)
r1
τ2
r2
r2
τn
rn
rn
TC
Figure D. Thermal equivalent
circuit
Figure B. Definition of switching losses
Published by
Infineon Technologies AG,
12
Figure E. Dynamic test circuit
Leakage inductance Lσ =180nH
a nd Stray capacity C σ =900pF.
Rev. 2_2 Sep 08